Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)
Identifieur interne : 000609 ( Main/Repository ); précédent : 000608; suivant : 000610Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)
Auteurs : RBID : Pascal:13-0090725Descripteurs français
- Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Nanofil, Nanomatériau, Hétérostructure, Mesure température, Spectre résolution temporelle, Résolution temporelle, Dépendance temps, Photoluminescence, Loi puissance, Emission photon, Etat métastable, Valence, Nitrure de gallium, Nitrure d'indium, Agrégat solide, Génération porteur charge, Etat localisé, Nanoamas, InGaN, GaN, Substrat silicium, 8107V, 7867L.
- Wicri :
- geographic : Valence (Drôme).
English descriptors
- KwdEn :
- Charge carrier generation, Gallium nitride, Heterostructures, III-V compound, III-V semiconductors, Indium nitride, Localized states, Metastable states, Nanocluster, Nanostructured materials, Nanowires, Photoluminescence, Photon emission, Power law, Solid clusters, Temperature measurement, Time dependence, Time resolution, Time resolved spectra, Valence.
Abstract
We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)</title><author><name sortKey="Cardin, V" uniqKey="Cardin V">V. Cardin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Dion Bertrand, L I" uniqKey="Dion Bertrand L">L. I. Dion-Bertrand</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Gregoire, P" uniqKey="Gregoire P">P. Gregoire</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Nguyen, H P T" uniqKey="Nguyen H">H. P. T. Nguyen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering and Regroupement Québécois sur les Materiaux de Pointe (RQMP), McGill University, 3480 University Street</s1><s2>Montreal, QC, H3A 2A7</s2><s3>CAN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3A 2A7</wicri:noRegion></affiliation></author><author><name sortKey="Sakowicz, M" uniqKey="Sakowicz M">M. Sakowicz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Mi, Z" uniqKey="Mi Z">Z. Mi</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering and Regroupement Québécois sur les Materiaux de Pointe (RQMP), McGill University, 3480 University Street</s1><s2>Montreal, QC, H3A 2A7</s2><s3>CAN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3A 2A7</wicri:noRegion></affiliation></author><author><name sortKey="Silva, C" uniqKey="Silva C">C. Silva</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author><author><name sortKey="Leonelli, R" uniqKey="Leonelli R">R. Leonelli</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Canada</country><wicri:noRegion>Montreal, QC, H3C 3J7</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0090725</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0090725 INIST</idno><idno type="RBID">Pascal:13-0090725</idno><idno type="wicri:Area/Main/Corpus">001248</idno><idno type="wicri:Area/Main/Repository">000609</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier generation</term><term>Gallium nitride</term><term>Heterostructures</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>Localized states</term><term>Metastable states</term><term>Nanocluster</term><term>Nanostructured materials</term><term>Nanowires</term><term>Photoluminescence</term><term>Photon emission</term><term>Power law</term><term>Solid clusters</term><term>Temperature measurement</term><term>Time dependence</term><term>Time resolution</term><term>Time resolved spectra</term><term>Valence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Nanofil</term><term>Nanomatériau</term><term>Hétérostructure</term><term>Mesure température</term><term>Spectre résolution temporelle</term><term>Résolution temporelle</term><term>Dépendance temps</term><term>Photoluminescence</term><term>Loi puissance</term><term>Emission photon</term><term>Etat métastable</term><term>Valence</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Agrégat solide</term><term>Génération porteur charge</term><term>Etat localisé</term><term>Nanoamas</term><term>InGaN</term><term>GaN</term><term>Substrat silicium</term><term>8107V</term><term>7867L</term></keywords><keywords scheme="Wicri" type="geographic" xml:lang="fr"><term>Valence (Drôme)</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)</s1></fA08><fA11 i1="01" i2="1"><s1>CARDIN (V.)</s1></fA11><fA11 i1="02" i2="1"><s1>DION-BERTRAND (L. I.)</s1></fA11><fA11 i1="03" i2="1"><s1>GREGOIRE (P.)</s1></fA11><fA11 i1="04" i2="1"><s1>NGUYEN (H. P. T.)</s1></fA11><fA11 i1="05" i2="1"><s1>SAKOWICZ (M.)</s1></fA11><fA11 i1="06" i2="1"><s1>MI (Z.)</s1></fA11><fA11 i1="07" i2="1"><s1>SILVA (C.)</s1></fA11><fA11 i1="08" i2="1"><s1>LEONELLI (R.)</s1></fA11><fA14 i1="01"><s1>Département de Physique and Regroupement Québécois sur les Materiaux de Pointe (RQMP), Université de Montreal, Case Postale 6128, Succursale Centre-ville</s1><s2>Montreal, QC, H3C 3J7</s2><s3>CAN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Electrical and Computer Engineering and Regroupement Québécois sur les Materiaux de Pointe (RQMP), McGill University, 3480 University Street</s1><s2>Montreal, QC, H3A 2A7</s2><s3>CAN</s3><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s2>045702.1-045702.6</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000182510750240</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0090725</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We have performed room-temperature time-resolved photoluminescence measurements on samples that comprise InGaN insertions embedded in GaN nanowires. The decay curves reveal non-exponential recombination dynamics that evolve into a power law at long times. We find that the characteristic power-law exponent increases with emission photon energy. The data are analyzed in terms of a model that involves an interplay between a radiative state and a metastable charge-separated state. The agreement between our results and the model points towards an emission dominated by carriers localized on In-rich nanoclusters that form spontaneously inside the InGaN insertions.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Nanofil</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Nanowires</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Heterostructures</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Mesure température</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Temperature measurement</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Time resolved spectra</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Résolution temporelle</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Time resolution</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Dépendance temps</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Time dependence</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Loi puissance</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Power law</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Ley poder</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Emission photon</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Photon emission</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Etat métastable</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Metastable states</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Valence</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Valence</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Agrégat solide</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Solid clusters</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Génération porteur charge</s0><s5>29</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Charge carrier generation</s0><s5>29</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Generación portador carga</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Etat localisé</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Localized states</s0><s5>30</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Nanoamas</s0><s5>31</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Nanocluster</s0><s5>31</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Nanomontón</s0><s5>31</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat silicium</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>65</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>7867L</s0><s4>INC</s4><s5>66</s5></fC03><fN21><s1>063</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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